Efficient Solar cell design and Optimisation Techniques: Semiconductor vol III

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Bol This book discusses the novel designs for high-efficiency solar cells, focusing on parameter extraction, performance enhancement, and optimization across multiple advanced photovoltaic technologies. It introduces a GaSb-based nanowire infrared solar cell capable of efficiently harvesting the infrared spectrum under 100 suns illumination. A comprehensive electrical model for dye-sensitized solar cells (DSSCs) is developed enabling accurate prediction of current-voltage characteristics and electrochemical impedance behavior under varying temperatures and insolation levels. Book demonstrates incorporating a semi-transparent carbon nanotube layer as a top electrode in GaAs/InAs multiple quantum well solar cells significantly improves charge collection boosting efficiency to 34.12%. A graded InGaN/GaN superlattice solar cell is analyzed, achieving a peak efficiency of 22.6% by optimizing indium mole fraction and quantum well thickness while mitigating strain and polarization effects. Collectively, these simulation-driven investigations using TCAD tools provide valuable pathways for developing next-generation, cost-effective, and highly efficient photovoltaic devices.

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This book discusses the novel designs for high-efficiency solar cells, focusing on parameter extraction, performance enhancement, and optimization across multiple advanced photovoltaic technologies. It introduces a GaSb-based nanowire infrared solar cell capable of efficiently harvesting the infrared spectrum under 100 suns illumination. A comprehensive electrical model for dye-sensitized solar cells (DSSCs) is developed enabling accurate prediction of current-voltage characteristics and electrochemical impedance behavior under varying temperatures and insolation levels. Book demonstrates incorporating a semi-transparent carbon nanotube layer as a top electrode in GaAs/InAs multiple quantum well solar cells significantly improves charge collection boosting efficiency to 34.12%. A graded InGaN/GaN superlattice solar cell is analyzed, achieving a peak efficiency of 22.6% by optimizing indium mole fraction and quantum well thickness while mitigating strain and polarization effects. Collectively, these simulation-driven investigations using TCAD tools provide valuable pathways for developing next-generation, cost-effective, and highly efficient photovoltaic devices.


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Merk LAP LAMBERT Academic Publishing
EAN
  • 9786209904851
Maat


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